Fluorescent White Organic Light-Emitting-Diode Fabricated By Interlayer Process

碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 102 === This experiment demonstrates the employment of a tri-interlayer device architecture with cascading energy levels to improve markedly the efficiency, and white-likely of a fluorescent organic light-emitting diode. As a tri-emissive layer structure was used in...

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Main Authors: Wen-Hsuan Lai, 賴文鉉
Other Authors: Fuh-Shyang Juang
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/h484r5
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spelling ndltd-TW-102NYPI51240292019-09-22T03:41:15Z http://ndltd.ncl.edu.tw/handle/h484r5 Fluorescent White Organic Light-Emitting-Diode Fabricated By Interlayer Process 以夾層結構製備螢光白光有機發光二極體 Wen-Hsuan Lai 賴文鉉 碩士 國立虎尾科技大學 光電與材料科技研究所 102 This experiment demonstrates the employment of a tri-interlayer device architecture with cascading energy levels to improve markedly the efficiency, and white-likely of a fluorescent organic light-emitting diode. As a tri-emissive layer structure was used in this experiment, for example, the resultant power efficiency at 100 and 1,000 nits was 15.1 and 14.8 lm/W, and CIE was (0.38, 0.36) closing white area, maximum luminance was 13,640 nits. Moreover, the neat film of the tri-emissive layer structure has even higher quality than the host-based Organic Light-Emitting-Diode counterpart has. The reason why the tri-interlayer device exhibits both high efficacy and high white-likely performance may be attributed to the MDP3FL the blue material was a host-transfer, balancing elections and holes combining in this manuscript, the wider recombination zone, the more effective carrier confinement, and energy-levels in the multi-interlayer allowing excitons to generate predominantly on the blue and yellow materials. The device structure was composed of a 125 nm indium tin oxide anode layer (ITO), a 25 nm poly(3,4-ethylenedioxythiophene)–poly(styrenesulfonate) (PEDOT:PSS) hole injection layer, a 20 nm tri-emissive layer, a 32 nm 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBi) electron-transporting layer (ETL), a 1 nm lithium fluoride (LiF) electron injection layer, and a 150 nm aluminium cathode layer. The tri-emissive layer structure was composed of a blue material of ,7-{2[phenyl(m-tolyl)amino]-9,9-dimethyl-fluorene-7-yl}-9,9-dimethyl-fluorene (MDP3FL), and yellow fluorescent material, Spiro-fluorene-dibenzosuberene[d](1,4-bis(4-(N,N-diphenylamine)-phenyl)-qui-noxaline) (Spiro-QDPAP). To conclude, this experiment reports the fabrication of a high efficiency, white performance fluorescent OLED with the use of a tri-interlayer structure that exhibits big-mac structure energy levels to maximize the balancing of elections and holes combining in blue and yellow materials. The observed principles may be extended to the fabrication of high efficiency, fluorescent OLEDs of other colors, allowing the applications of OLED displays and lighting to be more energy saving and competitive in the future. Fuh-Shyang Juang 莊賦祥 2014 學位論文 ; thesis 62 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 102 === This experiment demonstrates the employment of a tri-interlayer device architecture with cascading energy levels to improve markedly the efficiency, and white-likely of a fluorescent organic light-emitting diode. As a tri-emissive layer structure was used in this experiment, for example, the resultant power efficiency at 100 and 1,000 nits was 15.1 and 14.8 lm/W, and CIE was (0.38, 0.36) closing white area, maximum luminance was 13,640 nits. Moreover, the neat film of the tri-emissive layer structure has even higher quality than the host-based Organic Light-Emitting-Diode counterpart has. The reason why the tri-interlayer device exhibits both high efficacy and high white-likely performance may be attributed to the MDP3FL the blue material was a host-transfer, balancing elections and holes combining in this manuscript, the wider recombination zone, the more effective carrier confinement, and energy-levels in the multi-interlayer allowing excitons to generate predominantly on the blue and yellow materials. The device structure was composed of a 125 nm indium tin oxide anode layer (ITO), a 25 nm poly(3,4-ethylenedioxythiophene)–poly(styrenesulfonate) (PEDOT:PSS) hole injection layer, a 20 nm tri-emissive layer, a 32 nm 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBi) electron-transporting layer (ETL), a 1 nm lithium fluoride (LiF) electron injection layer, and a 150 nm aluminium cathode layer. The tri-emissive layer structure was composed of a blue material of ,7-{2[phenyl(m-tolyl)amino]-9,9-dimethyl-fluorene-7-yl}-9,9-dimethyl-fluorene (MDP3FL), and yellow fluorescent material, Spiro-fluorene-dibenzosuberene[d](1,4-bis(4-(N,N-diphenylamine)-phenyl)-qui-noxaline) (Spiro-QDPAP). To conclude, this experiment reports the fabrication of a high efficiency, white performance fluorescent OLED with the use of a tri-interlayer structure that exhibits big-mac structure energy levels to maximize the balancing of elections and holes combining in blue and yellow materials. The observed principles may be extended to the fabrication of high efficiency, fluorescent OLEDs of other colors, allowing the applications of OLED displays and lighting to be more energy saving and competitive in the future.
author2 Fuh-Shyang Juang
author_facet Fuh-Shyang Juang
Wen-Hsuan Lai
賴文鉉
author Wen-Hsuan Lai
賴文鉉
spellingShingle Wen-Hsuan Lai
賴文鉉
Fluorescent White Organic Light-Emitting-Diode Fabricated By Interlayer Process
author_sort Wen-Hsuan Lai
title Fluorescent White Organic Light-Emitting-Diode Fabricated By Interlayer Process
title_short Fluorescent White Organic Light-Emitting-Diode Fabricated By Interlayer Process
title_full Fluorescent White Organic Light-Emitting-Diode Fabricated By Interlayer Process
title_fullStr Fluorescent White Organic Light-Emitting-Diode Fabricated By Interlayer Process
title_full_unstemmed Fluorescent White Organic Light-Emitting-Diode Fabricated By Interlayer Process
title_sort fluorescent white organic light-emitting-diode fabricated by interlayer process
publishDate 2014
url http://ndltd.ncl.edu.tw/handle/h484r5
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