| Summary: | 碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所在職專班 === 102 === Due to the rapid growth of the electronics industry, particularly in the field of the display, the products with good pixels, quicker response speed, and the low electricity consumption are focused. IGZO has become an important material for improved product performances.
This study used a wet process to mix and ball mill the In2O3, Ga2O3, and ZnO powders for preparing the IGZO slurry with the ratio of 1:1:1 (IGZO-111) and 1:1:2 (IGZO-112). To improve the flowability of the powders, green density, and sintered density, spray drying was used to produce the spray-dried granules. The green parts were sintered at 1200℃, 1300℃, 1400℃, and 1500℃ in an electric furnace. The objective of this study was to investigate the effects of ZnO content and sintering temperature on the density, crystal structure, elemental distribution, and resistivity. .
The results showed that IGZO-111 sintered at 1500℃ achieved lowest resistivity, 1.53×10-3Ωcm. IGZO-111 sintered at 1300℃ can attain 100% dense. The grain sizes of IGZO-111 ceramics were higher than those of IGZO-112. In the crystal structure of IGZO-111, ZnGa2O4 and In2Ga2O7 formed after 1200℃ and 1500℃ sintering, respectively. Moreover, the crystal structure of IGZO-112 was InGaZnO4 after sintering between 1200℃ and 1500℃. EPMA results demonstrate that In, Ga, and Zn were non-uniform after 1200℃ sintering. However, after 1400℃ sintering, the distributions of In, Ga, and Zn were homogeneous.
|
|---|
