| Summary: | 碩士 === 國立臺北科技大學 === 電腦與通訊研究所 === 102 === We investigated RF TFT DC and high frequency performances with different gate layout design and different process condition in this thesis. First of all, by observing the changes of gate length and gate direct finger contact, we examined the electron parameter relation. After realizing the changing structure of high frequency performance to analyze how different gate structures affected the small signal parameter is necessary and to make high frequency performance optimal. After that we focused on how to improve RF TFT characteristics through different process condition. In a condition of the different anneal methods and silicide in the relation of electron parameter, this research analyzed DC and high frequency performances. By analyzing the influence of small signal parameter affected to different process condition, we observed high frequency characteristics when its process condition changed. During the process, the setting of RF TFT and fabrication process became optimal.
In the process of measurement of transfer, the main parameters are threshold voltage, Subthreshold Swing, transconductance, and mobility. High-frequency measurements focused on the analysis of Cutoff frequency and maximum oscillation frequency and discussed important parameters. According to its result, this paper can provide a guideline for RF TFT design and fabrication in the future.
|
|---|
