Patterning and Fabrication of Nanofibers Using Near-field Electrospinning for Sensor Application

碩士 === 逢甲大學 === 自動控制工程學系 === 103 === The research develops nanofiber-based sensing structures based on the materials of polyvinyl pyrrolidone by using near-field electrospinning technique. The electrospinning process parameters are analyzed to characterize properties of the spun fibers. The near-fie...

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Main Author: 林御玄
Other Authors: 張興政
Format: Others
Language:zh-TW
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/99236796619922245279
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spelling ndltd-TW-103FCU051460152016-07-31T04:22:36Z http://ndltd.ncl.edu.tw/handle/99236796619922245279 Patterning and Fabrication of Nanofibers Using Near-field Electrospinning for Sensor Application 近場靜電紡絲圖形化製作與感測應用之研究 林御玄 碩士 逢甲大學 自動控制工程學系 103 The research develops nanofiber-based sensing structures based on the materials of polyvinyl pyrrolidone by using near-field electrospinning technique. The electrospinning process parameters are analyzed to characterize properties of the spun fibers. The near-field electrospinning technology using direct write, continuous and controllable method is used to deposit solid nanofibers. The nanofibers are deposited on the collector by stretching and whipping rejection process. Polyvinyl pyrrolidone is used to electrospun nanofibers. The research develops polyvinyl pyrrolidone nanofibers field-effect transistor-based sensor is fabricated by electrospinning, photolithography, and lift-off processes to measure and analyze the electrical property. The advantages of the field-effect transistor-based sensor combined polyvinyl pyrrolidone nanofibers and metal electrodes in the chip have small volume, high precision and high sensitivity. Based on traditional field effect transistor principle and characteristic, the charges flow passes through the drain-source current characteristics which is discussed by apply different gate voltages. Experiment and investigate are excuted for effects of different channel length and numbers of nanofiber, operating voltage, current and resistance correlation. And I-V characteristics of MOS transistors are obtained. The output voltage is limited in the range of -5 V to 5 V, and the linear operation region of this element is-2 V~2 V. A single nanofiber and ten nanofibers channel structure devices has resistance 5.8 MΩ and 5.6 MΩ in the channel lengths between 100 and 500 μm. The measured current were 36 nA and 39.3 nA. A single nanofiber and ten nanofibers channel structure devices has resistance 13.01 MΩ and 13.03 MΩ in the relative humidity between 30 and 70 % on the channel lengths 100 μm. The threshold voltage of devices is 35 V. When the drain-source voltage is operated less than 20 V, the linear dependence of current-voltage relationship is obtained. When the drain-source voltage is operated greater than 45 V, the current becomes saturation. 張興政 2015 學位論文 ; thesis 91 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 逢甲大學 === 自動控制工程學系 === 103 === The research develops nanofiber-based sensing structures based on the materials of polyvinyl pyrrolidone by using near-field electrospinning technique. The electrospinning process parameters are analyzed to characterize properties of the spun fibers. The near-field electrospinning technology using direct write, continuous and controllable method is used to deposit solid nanofibers. The nanofibers are deposited on the collector by stretching and whipping rejection process. Polyvinyl pyrrolidone is used to electrospun nanofibers. The research develops polyvinyl pyrrolidone nanofibers field-effect transistor-based sensor is fabricated by electrospinning, photolithography, and lift-off processes to measure and analyze the electrical property. The advantages of the field-effect transistor-based sensor combined polyvinyl pyrrolidone nanofibers and metal electrodes in the chip have small volume, high precision and high sensitivity. Based on traditional field effect transistor principle and characteristic, the charges flow passes through the drain-source current characteristics which is discussed by apply different gate voltages. Experiment and investigate are excuted for effects of different channel length and numbers of nanofiber, operating voltage, current and resistance correlation. And I-V characteristics of MOS transistors are obtained. The output voltage is limited in the range of -5 V to 5 V, and the linear operation region of this element is-2 V~2 V. A single nanofiber and ten nanofibers channel structure devices has resistance 5.8 MΩ and 5.6 MΩ in the channel lengths between 100 and 500 μm. The measured current were 36 nA and 39.3 nA. A single nanofiber and ten nanofibers channel structure devices has resistance 13.01 MΩ and 13.03 MΩ in the relative humidity between 30 and 70 % on the channel lengths 100 μm. The threshold voltage of devices is 35 V. When the drain-source voltage is operated less than 20 V, the linear dependence of current-voltage relationship is obtained. When the drain-source voltage is operated greater than 45 V, the current becomes saturation.
author2 張興政
author_facet 張興政
林御玄
author 林御玄
spellingShingle 林御玄
Patterning and Fabrication of Nanofibers Using Near-field Electrospinning for Sensor Application
author_sort 林御玄
title Patterning and Fabrication of Nanofibers Using Near-field Electrospinning for Sensor Application
title_short Patterning and Fabrication of Nanofibers Using Near-field Electrospinning for Sensor Application
title_full Patterning and Fabrication of Nanofibers Using Near-field Electrospinning for Sensor Application
title_fullStr Patterning and Fabrication of Nanofibers Using Near-field Electrospinning for Sensor Application
title_full_unstemmed Patterning and Fabrication of Nanofibers Using Near-field Electrospinning for Sensor Application
title_sort patterning and fabrication of nanofibers using near-field electrospinning for sensor application
publishDate 2015
url http://ndltd.ncl.edu.tw/handle/99236796619922245279
work_keys_str_mv AT línyùxuán patterningandfabricationofnanofibersusingnearfieldelectrospinningforsensorapplication
AT línyùxuán jìnchǎngjìngdiànfǎngsītúxínghuàzhìzuòyǔgǎncèyīngyòngzhīyánjiū
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