| Summary: | 碩士 === 龍華科技大學 === 電子工程系碩士班 === 103 === In this thesis, two active mixcer were design and implementation in different bands, using a 0.16 um CMOS process and a 0.1 um GaAs pHEMT process, respectively.
A 10 to 15 GHz active double-balanced mixer in 0.16 um CMOS process was used, the Gilbert-cell mixer with transformer to achieve transconductance-boosted in transconductance stage and to reduce LO input power in switching stage, The current-reused current bleeding technique also adopted to rise up the conversion gain. The active load with TIA buffer was employed to improve linearity. The maximum conversion gain of proposed mixer was 17.5 dB at 12 GHz PLO=2 dBm. The mixer occupies a chip area, including probing pads, of 0.77 mm2 and consumes 25.5 mA, with a supply voltage of 1.8 V.
A 67 to 80 GHz active double-balanced millimeter-wave Gilbert-cell mixer in 0.1 um GaAs pHEMT process was studied. Two Marchand baluns are used in RF- and LO-ports to convert single-ended signals to differential signals, for wideband use. The differential amplifier and source follower are added in IF ports to rise up conversion gain and improve matching. The maximum mixer conversion gain is 16.31 dB at 77 GHz at PLO=3 dBm and 2.25 mm2 size with 456.7 mW power consumption.
|
|---|
