| Summary: | 碩士 === 明志科技大學 === 電子工程系碩士班 === 102 === This thesis is separated in the two sections to study the inverted device design and structure optimization. The first section is to explore a multilayer structure of WO3/Ag/WO3 (WAW) as a transparent anode electrode for efficient and inverted organic light-emitting diodes (OLEDs) to use. In addition, our inverted device structure was used the WO3 (30 nm)/ Ag (16 nm)/ WO3 (5 nm)/ BPhen: 15% Cs2CO3 (5 nm)/ BPhen (30 nm)/ CBP : 8% Ir (ppy)3 (15 nm)/ TAPC (55 nm)/ MoO3 (5 nm)/ Ag (150 nm). For electroluminescent measurements, the device performance showed the maximum current efficiency of 57 cd/A (~ 45 lm/W) and external quantum efficiency of ~ 15.98%.
In the second section, we have studied the effect of layer thickness of multilayer electrode on the quality of conductive thin-film. In our experiment results, the optimal WAW electrode exhibited the optical transmission of 70% in the range of visible light and the sheet resistance of 7.47 Ω/□. On the other hand, we observed that the buffer layer of BPhen:Cs2CO3 can be reduced the injection barrier at electrode/organic interface, which was measured by 0.048 eV.
Therefore, the experimental results of our thesis indicated that the use of WAW multilayer electrode is possible to replace the common transparent-conductive-oxide, for example indium-tin oxide, due to fabrication process is very simple and can produce at room temperature.
|
|---|
