| Summary: | 碩士 === 國立中興大學 === 物理學系所 === 103 === In our research, a light sensor was developed by using indium gallium zinc oxide thin films. When IGZO thin films absorbed UV light, the dissociation of electron-hole pairs in the films occurred. This leaded to the change of the electrical property of the films. So the purpose of light detection could be achieved by measuring the electrical property of the films. We first discussed the influence of different thickness of the films.
When the thickness of the film was 115 nm, there was the highest conversion efficiency (Efficiency, η) which was about 23924 irradiated under 365 nm UV light with intensity of 1710.2 μW/〖cm〗^2. The response of the film was repeatable. The lower limit of UV light detection of the film was 18.6 μW/〖cm〗^2 with conversion efficiency of 850.
In our work, conversion efficiency (η) 、response time(T_(90 res))、and response time constant (τ_res) of IGZO thin films were analyzed. Light sensor which made of the IGZO thin film of which the thickness is between 35 nm and 115 nm could detect UV light effectively, and the property of 115 nm-thick IGZO thin film was the best among others.
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