Polarization effect on optoelectronic properties of flexible gallium indium nitride light-emitting diodes
碩士 === 國立中興大學 === 精密工程學系所 === 103 === Flexible InGaN-based green light-emitting diodes (LEDs) were fabricated using laser lift-off (LLO) and twice epilayer transferring techniques. However, the piezoelectric polarization field induced by the lattice mismatch between the InGaN and GaN layers, which o...
Main Authors: | Keng-Chen Liu, 劉耕辰 |
---|---|
Other Authors: | Ray-Hua Horng |
Format: | Others |
Language: | zh-TW |
Published: |
2015
|
Online Access: | http://ndltd.ncl.edu.tw/handle/25630656762472266569 |
Similar Items
-
Growth of Gallium Nitride, Indium Gallium Nitride and Aluminum Gallium Nitride Nanocrystals for Light-emitting Diode Applications
by: Chung-WeiChuang, et al.
Published: (2016) -
Growth of Core-Shell Gallium Nitride/ Indium Gallium Nitride Nanorods for Light-Emitting Diode Applications
by: Shu-HanYang, et al.
Published: (2017) -
Gallium Nitride/Indium Gallium Nitride Light-Emitting Diode Fabricated by MOCVD-Effects of Patterned Sapphire Substrate, Buffer Layer, and Antiparallel Polar Domains on Device Properties
by: Jenn-Bin Huang, et al.
Published: (2012) -
The Study of Indium Zinc Oxide Transparent Conducting Layer on Gallium Nitride Light Emitting Diodes
by: Wang Jyun Hong, et al.
Published: (101) -
Investigation of Optoelectronic Properties for Nitride-Based Micro Light-Emitting Diodes
by: Nai-HsuanCheng, et al.
Published: (2017)