| Summary: | 碩士 === 國立勤益科技大學 === 電子工程系 === 103 === Since the integrated circuit flourish, process of power devices is very important. Because of the integrated circuit, MOSFET dimensions continue to shrink, such as, in electronic equipment, mobile phones, power supplies, computer motherboards and so on. Future technology of power devices is towards small size, low power consumption and high efficiency trend. Characteristics of future technological advances will improve the endless power devices.
Simulation software was used to simulate the process structure of devices and electrical stimulation. Using the best process parameters, and changing different length of the N-Drift under a different temperatures were used to test power devices, and analyzed breakdown voltage which power devices can withstand. That is LDMOS-200V power device discussed in this article. This article will discuss lateral type double diffused metal oxide MESFET device characteristics. And the principle of drift region doping was used to compare the difference between device fabricated on SOI substrate and the device fabricated on bulk silicon substrate.
Simulation software was used to verify the relationship that the longer length of the N-Drift, the higher breakdown voltage, and the higher the temperature, the greater on-resistance. In everyday appliances, maximum operating voltage is 220V. In this article, LDMOS device fabricated on bulk substrate at room temperature (300K) can withstand 210.02V of breakdown voltage. LDMOS device fabricated on SOI substrate at room temperature (300K) can withstand 208.14V of breakdown voltage.
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