The difference analysis between 200V power device fabricated in BULK substrate and 200V power device fabricated in SOI substrate
碩士 === 國立勤益科技大學 === 電子工程系 === 103 === Since the integrated circuit flourish, process of power devices is very important. Because of the integrated circuit, MOSFET dimensions continue to shrink, such as, in electronic equipment, mobile phones, power supplies, computer motherboards and so on. Future t...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/16183925954087232591 |