Mechanical stability of N,N′-ditridecylperylene-3,4,9,10- tetracarboxylic diimide-based flexible thin-film transistors

• Main Authors: Chi-WeiWang, 王志瑋
• Other Authors: Wei-Yang Chou
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/15440002309503133447

碩士 === 國立成功大學 === 光電科學與工程學系 === 103 === In this thesis, the mechanical stability of N,N’-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13H27)–based organic thin-film transistors (OTFTs) was studied and discussed. Bending OTFTs with radius of curvature of 10, 20, and 40 mm in compressive and tensile states were used to investigate the mechanical stability of devices by a linear-mobile stage. Electrical performance and interface damages of devices were analyzed during the bending operations of 104 times to study the mechanical stability of OTFTs. The saturated source-drain current (IDS) of OTFTs decreases with increasing the times of bend during the bending operation. In addition, the saturated IDS severely decrease for the device under bending operations with curvature of 10 mm. The capacitance-voltage (C-V) measurement of metal-insulator-semiconductor-metal (MISM) structure decreases with increasing the times of bending operations. In contrast, the on-set voltage of C-V measurement increases with increasing the times of bending operations. These results indicate that the bending operation induces traps or defects in the flexible devices. A focus ion beam scanning electron microscopy (FIB-SEM) was used to observe directly the structure damages in OTFTs. By the FIB-SEM measurement, air-gaps were found at the interface between the insulator and the electrodes of OTFTs. These structure defects lead to the decrease of capacitance of OTFTs and the increase of on-set voltage in C-V measurement. Therefore, the deteriorative interface of OTFTs after mass bending operations leads to the degradation of electrical performances.