Investigation on High Performance Indium Zinc Tin Oxide Semiconductor for Thin Film Transistors Application
博士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === In recent years, the transparent amorphous oxide semiconductor (TAOS) has attracted a lot of attention to replace the silicon material as the channel layer of thin film transistors (TFTs). Among these materials, the indium gallium zinc oxide (InGaZnO: IGZO)...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/bbj7mz |