Design of the Complementary Face-Tunneling FET for Ultra-low Power Applications
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === Tunneling effect is a common phenomenon when transistors shrink to the nanoscale, for transistors, usually considered as negative effects mostly. Tunnel FET is a transistor used tunneling mechanism as the control switch of channel, in recent years, it is co...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/tmgd3z |