| Summary: | 碩士 === 國立交通大學 === 電子物理系所 === 103 === In this study, CuIn1-xGaxSe2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD). Then, We used X-ray diffraction to investigate the crystallization characteristics, because we want to find the best substrate temperature to growth CIGS thin film. In SEM images, we compared the crystal morphology. From the EDS, we confirm that when the substrate temperature is 500℃, the CIGS thin films has more homogenous elemental distribution. From the above results , the best crystalline quality of the thin film occurred at the growth temperature of 500℃. Then, we have successfully demonstrated the advantages of femtosecond laser annealing on non-vacuum CIGS thin films. The femtosecond laser annealing can induce the re-crystalline without melting effect. The XRD pattern has suggested the (112)-orientation of thin films was significantly improved. And the PL spectrum implied some defect-level or band-fluctuation were eliminated so that the smaller FWHM of PL peaks and higher saturation power were observed in annealed CIGS thin film. From femtosecond pump-probe spectroscopy, we can observed that surface recombination is suppressed by laser annealing. Finally, the improvements of performance in the devices consist with the result of XRD and PL measurement. The conversion efficiency and ideal factor were obviously enhanced after laser annealing. This result has revealed femtosecond laser annealing is a promising approach to rapidly improve the CIGS thin films prepared by non-vacuum particle synthesis.
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