A Study of CoSi2 Fabricaton
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 103 === Metal silicides have been developed as interconnect and contact materials for semiconductor device fabrication. CoSi2 is the most widely used material for silicide technology after 180nm, since it has immunity to narrow line width effect, lower resistivi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/07400136372652085896 |