The Gate Circuit Improvement and Simulation of TFT-LCD

• Main Authors: Kao, Chun-Hsu, 高俊緒
• Other Authors: Chao, Paul C.-P.
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/47s667

碩士 === 國立交通大學 === 平面顯示技術碩士學位學程 === 103 === In this paper, Trends in consumer electronics products pursues slim and light, TFT-LCD high resolution requires more and be in the same size to achieve high resolution, the relative increase in the number of drives used in IC, It has been developed to GIP (Gate Driver In Panel) driven approach to achieve their goals, while achieving a narrow frame design (Slim Border). GIP is a gate driver circuit design on a substrate of glass, It’s also facing the a-Si: H Stress Effect on the material properties problems. Coupled with an increase in the number of components used in TFT, the TFT device for a long time under the bias voltage operation, the internal carrier film transistor induced charge trapping defects, cause to display abnormal function of the panel. Reference to others papers and manufacturing process, Use the SPICE simulating to establish a circuit model, in order to use the least resources for circuit improvements and reduce the impact bias stress effect and thermal stress, thus achieving voltage regulation.