The influences of the 830nm Laser in the Electrochemical Etching Process with P-type Silicon Wafers

• Main Authors: Wang Yiru , 王薏茹
• Other Authors: Lee, Tien-His
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/68707759232608360952

碩士 === 國立中央大學 === 材料科學與工程研究所 === 103 === In recent years, researches on porous silicon and related applications are widely applied to semiconductor processing, solar cells, drug testing and food testing. Thus, the research value of porous silicon is widely acknowledged. In 2012, when Laboratory of Nanoclub was conducting electrochemical etching for the P-type silicon wafer, this research team accidentally discovered that the etching rate would decrease if the He-Ne laser (633nm) was synchronously shined on the surface of the wafer. The study extends the existing research results, aiming to further research the influences of laser energy parameters and laser beam wavelengths on electrochemical etching through the use of the 830nm IR laser. This technology can integrate the MEMS processing techniques such as exposure, development and lithography in the future and can replace the etching process of semiconductors.