| Summary: | 碩士 === 國立嘉義大學 === 電子物理學系光電暨固態電子研究所 === 103 === The thesis is separated to the three sections. First section: changing the nitrogen pressure to grow cobalt nitride (CoN) on the surface of zinc oxide (ZnO) (0001) by imitating the principle of molecular beam epitaxy. In spite of the current experiments which use low-energy nitrogen ions sputtering on ultra-thin films of cobalt, Auger electron spectroscopy (AES) is used to observe the nitrogen composition variation of the surface. Furthermore, calculate the thickness of Co with NIST database software. The nitrogen signal on the surface can be found obviously and it will change as the concentration of nitrogen.
The second section is focused on the calculation of auger electron signal ratios based on hard sphere model for an ideally epitaxial layer system, which is a two pair of single crystal layer thin film deposited on a substrate with high orientated c-axis (0001) bulk structure. We used inelastic mean free path(IMFP) and effective attenuation length(EAL) models in NIST databases to calculate λ parameters in theoretical auger electron signal ratio calculation. The atomic stacking conditions such as Ga-N/(O-Zn…O-Zn) and N-Ga/(O-Zn…O-Zn) are presented in this study. The prospect of this result can be applied for auger electron spectroscopy techniques in high vacuum molecular beam epitaxy or atomic layer deposition system.
Third section: during the last few time, the study aims to establish a plasma-assisted molecular beam epitaxy system. In order to reduce the cost and achieve the spot of sample preparation and measurement, we integrate the system and design the components. The molecular beam epitaxy system has been designed and built completely. Finally, we found that by applying atomic force microscopy (AFM), gallium successfully deposited on the surface of the glass substrate.
|
|---|
