Improved Efficiency of InGaN/GaN Light-Emitting Diode Using Local Surface Plasmon

• Main Authors: Shun-Cia Wang, 王舜洽
• Other Authors: Min-Yen Yeh
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/8n8p6n

碩士 === 國立高雄海洋科技大學 === 微電子工程研究所 === 103 === Periodical structure for extraction efficiency of the gallium nitride light emitting diode has an enhanced effect at low current operating to promote high brightness light emitting devices. In this article, polystyrene microspheres and silver nano particles self-assembly arranged on the InGaN/GaN light emitting diode devices to become periodical structure. Self-assembled arranged structures were prepared by drain method. It is an easy and low cost operation. The periodical structure effects were simulated using a photonic crystal structure characteristic analyses by FDTD method. The effect of light output efficiency on different periodical structures was simulated. From the FDTD analyses, the LED driving voltage can be reduced up to 13.42％ with the introduction of polystyrene microspheres and silver nano particles. A better light output was obtained, as using polystyrene microspheres in a diameter of 100 nm, and spacing of neighbor spheres of 100 nm with a low silver content of 0.36％ in volume ratio.