Study on Resistive Switching Mechanism of Oxide-based and Supercritical Fluid Sulfuration Effect on Resistance Random Access Memory

• Main Authors: WANG,MING-HUI, 王銘徽
• Other Authors: CHEN,RONG-HUEI
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/19720483662697990876

碩士 === 國立高雄師範大學 === 化學系 === 104 === Abstract The experiment successfully prepared a CBRAM device with resistive switching characteristics. The device was fabricated by sputtering a 13nm hafnium oxide layer followed by a copper layer on top of a pre-existing titanium nitride layer using a multi-target magnetron sputter system. The titanium nitride serves as the bottom electrode and the copper serves as the top electrode forming the Cu/HfO2/TiN device structure. Besides using photolithography to pattern via sizes, multi-target magnetron sputtering was used to deposit the copper bottom electrode. In addition, high-density plasma chemical vapor deposition system was applied for the insulation layer, and the inductively coupled plasma etch system was used to etch and form via hole formation. Finally in the intermediate layer SiO2 sputtering a layer of copper as the electrode. Other than this fab process, a supercritical fluid curing technique successfully completes the vulcanization process. The Agilent B1500A was used to measure changes in resistance in the SiO2 insulating layer. Conduction mechanism fitting and resistance switching mechanism were further confirmed based results of electrical measurements.