Study on Resistive Switching Mechanism of Oxide-based and Supercritical Fluid Sulfuration Effect on Resistance Random Access Memory
碩士 === 國立高雄師範大學 === 化學系 === 104 === Abstract The experiment successfully prepared a CBRAM device with resistive switching characteristics. The device was fabricated by sputtering a 13nm hafnium oxide layer followed by a copper layer on top of a pre-existing titanium nitride layer using a multi-targe...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19720483662697990876 |