A Low-Voltage Sensing and Write-Back Scheme for Embedded Dynamic Random Access Memory

碩士 === 國立清華大學 === 電機工程學系 === 103 === Embedded DRAMs are widely used in many electronic products due to its more cost-effective than SRAM and its faster read/write random access than FLASH. However, increasingly large power consumption is a big problem in SOC system. For this reason, low power design...

Full description

Bibliographic Details
Main Authors: Chen, Yu-Lin, 陳昱霖
Other Authors: Chang, Meng-Fan
Format: Others
Language:en_US
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/uqux6t