| Summary: | 碩士 === 國立臺南大學 === 材料科學系碩士班 === 103 === Normally, graphene synthesized with chemical vapor deposition (CVD) method is of polycrystal structure and low electron mobility as comparing with single crystal graphene. In this research, taking advantage of the CVD system, we grow single-crystal graphene on the surface of copper foils. The foils are preheated in the air to form an oxide of copper on the surface. The oxide can provide the oxygen in the oven to remove the carbon residuals which very likely develop into nucleation centers and often obstruct the formation of large area single crystal graphene.
In the CVD process, methane is used as a carbon source to interact with hydrogen and synthesis graphene. An enclosure-like space in the high temperature furnace is introduced. The space can provide a beneficial environment, which substantially reduce graphene growing rate, for the formation of large area single-crystal graphene. Finally, we analysis surface morphology and layer number of single-crystal graphene with OM、SEM and Raman spectroscope. The single-crystal graphene of size more than 0.2mm is synthesized successfully.
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