Investigation of Current Tunneling Behavior for p- and n-type MOS Capacitors with Ultra-thin Oxides
博士 === 國立臺灣大學 === 電子工程學研究所 === 103 === In this thesis, the current tunneling behaviors of MOS(p) and MOS(n) capacitors with ultra-thin SiO2 dielectric were explored under both accumulation and deep depletion modes. In Chapter 2, it is found that there is a clear “kinked point” in every I-V curve of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99466846273054232665 |