Electrical characterizations of diodes fabricated on GaN and InGaN films by RF magnetron sputtering
博士 === 國立臺灣科技大學 === 材料科學與工程系 === 103 === High thermal conductivity, high electron mobility, high electron saturation velocity, and large band gap of nitride based materials have attracted many research interests in recent years. The GaN and InGaN materials have brought promising future for the appli...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/28470212517218772237 |