The study of ITO/Ti/ITO and ITO/TiN/ITO complementary resistive switching devices

• Main Authors: Chi-Chin Lin, 林吉欽
• Other Authors: Shyankay Jou
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/68695705056002410887

碩士 === 國立臺灣科技大學 === 材料科學與工程系 === 103 === In this study, we used titanium (Ti)、titanium nitride(TiN) and indium tin oxide (ITO) as the electrodes to fabricate the ITO/Ti/ITO and ITO/TiN/ITO tri-layer stacking structure. With an anneal process interfacial layer will be formed at TiN(Ti)/ITO and ITO/TiN(Ti) interfaces. The Ti/ITO and TiN/ITO devices showed bipolar switching of resistance. The Ti/ITO device had an average ratio of about 1.5. The TiN/ITO device had a high resistance ratio of 103, possibly caused by the Schottky contact in TiN/TiOx junction. At high resistance state of the TiN/TiOx/ITO conductive modal is governed by Schottky emission; whereas, the Ti/TiOx/ITO is Poole-Frenkel emission at high resistance state, suggesting that there are more defects at interfacial oxide layer TiOx in the Ti/TiOx/ITO device. Annealing the the ITO/Ti/ITO and ITO/TiN/ITO tri-layer stacks in vacuum produced ITO/TiOx/Ti/TiOx/ITO and ITO/TiOx/TiN/TiOx/ITO complementary resistive switching (CRS) devices. The CRS devices with TiN as intermediate electrodes had nonlinearity factor of about 20. With nitrogen content in TiN electrodes, CRS devices had a higher resistance ratio at the status “1” (HRS/LRS) to the status “ON” (LRS/LRS).