The study of ITO/Ti/ITO and ITO/TiN/ITO complementary resistive switching devices
碩士 === 國立臺灣科技大學 === 材料科學與工程系 === 103 === In this study, we used titanium (Ti)、titanium nitride(TiN) and indium tin oxide (ITO) as the electrodes to fabricate the ITO/Ti/ITO and ITO/TiN/ITO tri-layer stacking structure. With an anneal process interfacial layer will be formed at TiN(Ti)/ITO and ITO/Ti...
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ndltd-TW-103NTUS55660622017-03-11T04:22:00Z http://ndltd.ncl.edu.tw/handle/68695705056002410887 The study of ITO/Ti/ITO and ITO/TiN/ITO complementary resistive switching devices ITO/Ti/ITO與ITO/TiN/ITO互補式記憶體電阻切換之研究 Chi-Chin Lin 林吉欽 碩士 國立臺灣科技大學 材料科學與工程系 103 In this study, we used titanium (Ti)、titanium nitride(TiN) and indium tin oxide (ITO) as the electrodes to fabricate the ITO/Ti/ITO and ITO/TiN/ITO tri-layer stacking structure. With an anneal process interfacial layer will be formed at TiN(Ti)/ITO and ITO/TiN(Ti) interfaces. The Ti/ITO and TiN/ITO devices showed bipolar switching of resistance. The Ti/ITO device had an average ratio of about 1.5. The TiN/ITO device had a high resistance ratio of 103, possibly caused by the Schottky contact in TiN/TiOx junction. At high resistance state of the TiN/TiOx/ITO conductive modal is governed by Schottky emission; whereas, the Ti/TiOx/ITO is Poole-Frenkel emission at high resistance state, suggesting that there are more defects at interfacial oxide layer TiOx in the Ti/TiOx/ITO device. Annealing the the ITO/Ti/ITO and ITO/TiN/ITO tri-layer stacks in vacuum produced ITO/TiOx/Ti/TiOx/ITO and ITO/TiOx/TiN/TiOx/ITO complementary resistive switching (CRS) devices. The CRS devices with TiN as intermediate electrodes had nonlinearity factor of about 20. With nitrogen content in TiN electrodes, CRS devices had a higher resistance ratio at the status “1” (HRS/LRS) to the status “ON” (LRS/LRS). Shyankay Jou 周賢鎧 2015 學位論文 ; thesis 101 zh-TW |
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碩士 === 國立臺灣科技大學 === 材料科學與工程系 === 103 === In this study, we used titanium (Ti)、titanium nitride(TiN) and indium tin oxide (ITO) as the electrodes to fabricate the ITO/Ti/ITO and ITO/TiN/ITO tri-layer stacking structure. With an anneal process interfacial layer will be formed at TiN(Ti)/ITO and ITO/TiN(Ti) interfaces.
The Ti/ITO and TiN/ITO devices showed bipolar switching of resistance. The Ti/ITO device had an average ratio of about 1.5. The TiN/ITO device had a high resistance ratio of 103, possibly caused by the Schottky contact in TiN/TiOx junction. At high resistance state of the TiN/TiOx/ITO conductive modal is governed by Schottky emission; whereas, the Ti/TiOx/ITO is Poole-Frenkel emission at high resistance state, suggesting that there are more defects at interfacial oxide layer TiOx in the Ti/TiOx/ITO device.
Annealing the the ITO/Ti/ITO and ITO/TiN/ITO tri-layer stacks in vacuum produced ITO/TiOx/Ti/TiOx/ITO and ITO/TiOx/TiN/TiOx/ITO complementary resistive switching (CRS) devices. The CRS devices with TiN as intermediate electrodes had nonlinearity factor of about 20. With nitrogen content in TiN electrodes, CRS devices had a higher resistance ratio at the status “1” (HRS/LRS) to the status “ON” (LRS/LRS).
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author2 |
Shyankay Jou |
author_facet |
Shyankay Jou Chi-Chin Lin 林吉欽 |
author |
Chi-Chin Lin 林吉欽 |
spellingShingle |
Chi-Chin Lin 林吉欽 The study of ITO/Ti/ITO and ITO/TiN/ITO complementary resistive switching devices |
author_sort |
Chi-Chin Lin |
title |
The study of ITO/Ti/ITO and ITO/TiN/ITO complementary resistive switching devices |
title_short |
The study of ITO/Ti/ITO and ITO/TiN/ITO complementary resistive switching devices |
title_full |
The study of ITO/Ti/ITO and ITO/TiN/ITO complementary resistive switching devices |
title_fullStr |
The study of ITO/Ti/ITO and ITO/TiN/ITO complementary resistive switching devices |
title_full_unstemmed |
The study of ITO/Ti/ITO and ITO/TiN/ITO complementary resistive switching devices |
title_sort |
study of ito/ti/ito and ito/tin/ito complementary resistive switching devices |
publishDate |
2015 |
url |
http://ndltd.ncl.edu.tw/handle/68695705056002410887 |
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