Mechanism and application of self-assembly 3-aminopropyl-trimethoxysilane thin film induced gold nanoparticles

• Main Authors: Hong-huei Huang, 黃宏輝
• Other Authors: Ching-chich Leu
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/96862912821037096389

碩士 === 國立高雄大學 === 化學工程及材料工程學系碩士班 === 103 === Herein, the multi-layered 3-aminopropyl-trimethoxysilane(APTMS) were spin coated on the substrate by a self-assembly monolayer(SAM) process. And the gold nanoparticles(GNPs) with small size(~5nm) and high coverage density(~1012cm-2) were fabricated by dipping substrates into the mixture of chloroauric acid(HAuCl4) and sodium hydroxide. This process is different from the citrate and the NaBH4 reduction method. The temperature control, reduction agent, and protection agent are needed in those two methods, but not in APTMS thin film induced gold nanoparticles. Thus, the process can be simpler and the influences on environment are reduced. In the test of pH values, concentrations, dipping times and speed of centrifugations of HAuCl4 solution, we speculated that the GNPs were produced by the assist of APTMS molecules. However, the GNPs on the substrate was easily removed during the chemical-solution deposition of HfO2 due to the strong acid solution. To overcome this problem, the APTMS was further dip coated to cover the GNPs, constructing the Si/Oxide/APTMS/GNPs/APTMS sandwich structure. After the APTMS was dip coated on the GNPs, the stability of GNPs is improved. In this work, the structure constructed on the Si/HfO2(high-κmaterial) substrate shows a better electric property than the structure constructed on Si/SiO2 substrate. And the structure of Si/HfO2/APTMS/GNPs/APTMS can stand 7V of gate sweeping voltage, showing 2.8V of memory window at most.