| Summary: | 碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 103 === In this study, the Nd:YAG solid laser with a wavelength of 1064 nm, a frequency of 30 kHz and a speed of 800 mm/min was used to form various laser vias. Various vias were formed by different parameters, including the power of the laser, the spacing of the via , the width of the via, and the pattern of the via. The damage after laser dig vias was removed by KOH alkali solution with different parameters, including the concentration of the etching solution as well as the etching time. At the same time, the morphologies of various vias were detected by scanning electron microscope (SEM). To separate the p- and n-type region of electrode, the combination of the laser scribing and the KOH alkali etching were achieved. The parameters of the laser include the power, the spacing line, the speed, concentration of the KOH solution and the etching time. The results reveal the diameter of the via with 100 μm can be formed by the laser with a power of 30 %. The laser damage can be completely removed by the KOH alkali etching solution with the concentration of 30% and the etching time of 6 min. The p-type electrode contact can be formed by the laser scribing with a power of 3 %, the KOH etching solution concentration of 5 %, and the etching time of 10 min. Finally, the emitter-wrap-through (EWT) silicon solar cell with a conversion efficiency of 8.07%, a open voltage of 575 mV, a short-current density of 27.3 mA/cm2 and a fill factor of 0.5 was demonstrated after co-firing process.
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