Development of Electroplating Copper Technology on Photovoltaic Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells

• Main Authors: Ren-Kai Pan, 潘任楷
• Other Authors: Chin-Lung Cheng
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/aafybm

碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 103 === In this thesis, improved photovoltaic characteristics of screen-printed monocrystalline silicon solar cells (SPMSSCs) were achieved by electroplating copper technology with copper sulfate solution. The highly cost screen-printed silver pastes were used as the front electrode of SPMSSCs. The series resistance of the SPMSSCs with Ag pastes was still high due to glass powder in Ag pastes. To enhance the series resistance and reduce the cost, the nickel silicide and the electroplating copper were presented. The parameters, including various seed layers, the thicknesses of the seed layers, the annealing temperature, the annealing time, the finger width, as well as electroplating current densities and time, were achieved. The seed layers include Ni and Ni/Cu stacked films. The thicknesses were ranged from 200 to 600 nm. The annealing temperatures and time were to be around 375~400 oC and 10~60 min, respectively. The widths of the fingers were increased from 150 to 240 nm. The current density and time of electroplating copper were to be 25~35 mA/cm2 and 10~40 min, respectively. The results suggest that the SPMSSC with a conversion efficiency of 14.6%, a open voltage of 627 mV, a short-current density of 34.5 mA/cm2, and a fill factor of 0.675 was demonstrated by electroplated copper process at a Ni seed layer of 300 nm, a annealing temperature of 375 oC for 40 min, a current density of 30 mA/cm2 for 20 min, and the finger width of 200 um.