| Summary: | 碩士 === 國立臺北科技大學 === 光電工程系研究所 === 103 === In this study, Ga-doped Zinc Oxide (GZO) thin films on the c-plane Sapphire were prepared by Pulsed Laser Deposition using Nd:YAG Q-switched laser with 266nm wavelength. The ZnO : Ga targets used in our experiment were made from high purity ZnO powder doped with desired amount of Ga2O3 (99.99%).
Crystal structures and lattice parameters of the films were characterized by the X-ray diffraction (XRD) method. The optical properties of the ZnO : Ga thin films were carried out by the Photoluminescence spectrum. The electrical properties and carrier concentrations were obtained by Hall Effect Measurements. We obtained low resisivity ZnO:Ga thin films under the fabricated of relatively low oxygen pressure. The resistivity is about 0.002468~0.01017Ω-cm, carrier mobility: 1.95~15cm2/V‧s, and carrier concentration is about 1.55x1019~3.14x1020cm-3. Furthermore, we change the oxygen gas flow rates to 5 sccm. The mobility of the films increases obviously, which is related to the improvement of the crystal quality. The resistivity is about 1.95x10-4~2.35 x10-3Ω-cm, carrier mobility: 5.64~69.6cm2/V‧s, and carrier concentration is about 3.87x1020~1.01x1021cm-3. Besides, a visible transmittance of 90% was obtained in ZnO : Ga thin films.
|
|---|
