| Summary: | 碩士 === 元智大學 === 化學工程與材料科學學系 === 103 === We investigated the interaction between zinc oxide (ZnO) and hydrated polyvinyl alcohol (PVA) films which were used to design and fabricate as conducting channels in thin film transistors (TFTs). The ZnO/PVA composite was fabricated by sputtering ZnO on ITO substrates and spin-coating PVA on top of the ZnO film. Results showed that the resistivity of the ZnO/PVA film was significantly lower than that of ZnO or PVA films because electrons were generated by the chemisorption reaction at the ZnO/PVA interface. From the analysis of the photoluminescence (PL) spectra, the concentration of oxygen vacancies in the ZnO/PVA films showed lower than that in ZnO films. The amount of oxygen vacancies decreased when the applied voltage increased for the ZnO/PVA films. Moreover, the electrochemical reaction occurred at the ZnO/PVA interface when a larger voltage was applied to the composite films. The PVA/ZnO films can be further designed and fabricated as conducting channels in the TFTs.
Keyword: ZnO, PVA, oxygen vacancy, chemisorption, TFT
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