| Summary: | 碩士 === 元智大學 === 光電工程學系 === 103 === The content of this paper discusses the GaN light-emitting diodes as the main light-emitting diodes for the indium tin oxide film with a very small aperture developing technologies mask experiments. By anodic arc evaporation system operating vacuum coating apparatus and reactive ion source, a low pressure arc discharge, guidance magnetic field incident on the way the vapor deposition material green sheet, evaporation ionized plasma, the vaporized particles are deposited on the substrate by the chemical activity . Indium tin oxide thin film can be obtained having a low resistance at a low substrate temperature.
Very small aperture of the mask and then use indium tin oxide film on a single Chip developing a plurality of holes, investigate its impact on the luminous efficiency of light emitting diodes and optical properties and thickness of the parameter control with crystal deposition rate and indium tin oxide film thickness, in order to find out the influence of the relatively good film thickness of the experiment
In terms of measurements, will be used to measure the thickness of the ITO film ellipsometer, RT-70V four-point probe system to measure the sheet resistance, a spectrophotometer to measure the transmittance T%, WAT integrating sphere point measurement system to measure its Optical character.
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