Summary: | 碩士 === 國立中正大學 === 物理系研究所 === 104 === This experiment used the evaporator gun to grow cobalt, nickel, cobalt and nickel alloy thin film on the silicon substrate in high vacuum environment, then thin film contacted oxygen, it made the surface of nickel, cobalt, nickel-cobalt alloy oxide layer, and the use of X-ray Absorption Spectroscopy (XAS) to determine the presence of a surface oxide layer. Obtaining a sample of NiO/Ni/Si, CoO/Co/Si, NiCo-O/NiCo/Si. We used Magneto-Optical Kerr Effect (MOKE) and Vibrating sample magnetometer (VSM) to analyze the sample. The order of growing on silicon substrate is metal layer, magnetic layer, oxide layer and metal layer. We used tantalum as a metal layer. Then we did four point measurment. The results of Magnetic measurement, Ta/CoO+Co(d)/Ta/Si: d=7, 40 (nm) and [NiCoO+NiCo]3/Si magnetic easy axis are all belonging parallel to the surface of the sample. By the four point measurement, sample had magnetoresistane signal. The Sample Ta/NiO+Ni¬(d)¬/Ta/Si, d thickness to increases, the resistance produced phenomenon of diminishing.
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