| Summary: | 碩士 === 中原大學 === 物理研究所 === 104 === In this thesis, we investigated the epilayers of Cd1-xMnxTeon Si (211) substrates, which were grown by molecular beam epitaxy. Photoluminescence, Hall effect and a simple growth model were employed to investigate the optical properties, carrier mobility and the interaction of Cd, Te and Mn, respectively. In the growth model analysis, when the growth condition was under VI-rich, we observed the number of CdTe molecular layer per Cd BEP (beam equivalent pressure) and the number of MnTe molecular layer per Mn BEP were independent of the Mn composition. When the growth condition was under II-rich, we observed the number of CdTe molecular layer per Te BEP was decreased, and the number of MnTe molecular layer per Te BEP was increased, respectively, as the Mn composition increased. The results imply that Mn and Cd scrambled for Te, and Mn was prevailed. Besides, we found that a monolayer MnTe on Si substrates as an interface buffer layer significantly improve the growth rate of CdTe at a relative high growth temperature. Moreover, the quality of Cd1-xMnxTe epilayer, which were grown on (211) and (111) substrates respectively, were analyzed by photoluminescence and Hall effect. The results show that the Cd1-xMnxTe epilayers grown on (211) substrates have less defects.
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