| Summary: | 博士 === 逢甲大學 === 電機與通訊工程博士學位學程 === 104 === The purpose of this paper is the application of zinc oxide thin films in production and development of highly transparent thin film transistors (ZnO-TFTs), and zinc oxide films are applied to RRAM. Due to wide bandgap properties of zinc oxide material, zinc oxide become highly anticipated transparent semiconductor material.
Therefore, in this thesis, zinc oxide thin films are used for indium-doped and tin-doped deployment. Then the study made ZnO thin films with IZO and TZO structures, and applied in the TFT. However, zinc oxide thin films belong to oxide materials, and also to the high dielectric material (high-K). In RRAM, at present, more and more research are focused on exploring oxygen vacancies and resistance wire filament theory in the storage layer.
To the reaction caused by metal electrode, this thesis also has simple discussion.
This thesis is divided into six parts, including preface, literature discussion, zinc oxide gel-sol configuration, TFT analysis, RRAM analysis and conclusions. In the TFT analysis, we discuss the zinc oxide film physical analysis and electrical analysis. In the meantime, tin-doped and indium-doped zinc oxide devices are also analyzed, which can be leaned in the analysis section of RRAM. The bonding characteristics of Gold and zinc oxide are used to produce RRAM. This RRAM structure is Al / Au / ZnO / Al. We made a simple comparison between PRAM with gold in upper electrode and PRAM without gold electrode
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