Optoelectronic and Mechanical Properties of Metal Oxide Multilayer Thin Films for Sensor Application

博士 === 國立高雄應用科技大學 === 機械與精密工程研究所 === 104 === This study investigated the morphological, crystal, surface, optical, electrical, and mechanical properties of metal oxide multilayer thin films for sensor application. The metal oxide multilayer thin films reported in this study are zinc oxide (ZnO)/moly...

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Bibliographic Details
Main Authors: WANG, SHI-HAO, 王士豪
Other Authors: FANG, TE-HUA
Format: Others
Language:en_US
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/2u3h62
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Summary:博士 === 國立高雄應用科技大學 === 機械與精密工程研究所 === 104 === This study investigated the morphological, crystal, surface, optical, electrical, and mechanical properties of metal oxide multilayer thin films for sensor application. The metal oxide multilayer thin films reported in this study are zinc oxide (ZnO)/molybdenum (Mo)/ZnO and aluminum-doped ZnO (AZO)/Mo/AZO multilayer thin films by RF magnetron sputtering. In addition, we compared properties of the films with different Mo thickness and annealing temperatures. The results show that the transparency, surface roughness, contact angle, sheet resistance, and nanoindentation of the metal oxide multilayer thin films depend on the Mo layer thickness and the annealing temperature. The roughness of the metal oxide multilayer thin films increased with decreasing Mo layer thickness and increasing annealing temperature. The sheet resistance and the penetration depth of the metal oxide multilayer thin films decreased with increasing Mo layer thickness and annealing temperature. The contact angle is approximately the same. The maximum hardness was 8.28 and 8.14 GPa for AZO/Mo/AZO multilayer thin film with a Mo layer thickness of 20 nm and an annealing temperature of 500 °C, respectively. The minimum sheet resistance was 39.71 and 48.26 Ω/□ for AZO/Mo/AZO multilayer thin film with a Mo layer thickness of 20 nm and an annealing temperature of 500 °C, respectively. The maximum hardness was 6.11 and 6.14 GPa for ZnO/Mo/ZnO multilayer thin film with a Mo layer thickness of 20 nm and an annealing temperature of 500 °C, respectively. The minimum sheet resistance was 1.57 × 102 and 1.63 × 102 Ω/□ for ZnO/Mo/ZnO multilayer thin film with a Mo layer thickness of 15 nm and an annealing temperature of 500 °C, respectively. The maximum responses reached 42%, obtained with at 5 ppm NO gas of the ZnO/Mo/ZnO multilayer thin films with Mo layer thicknesses of 12 nm.