| Summary: | 碩士 === 國立中興大學 === 光電工程研究所 === 104 === In this paper, to used n-type silicon substrate and the ZnAlO seed film as the object of research obtains electrical parameters. And the ZnAlO seed film is done XRD analysis in order to look for the constant of lattice.In the second step, ZnO and ZnLiO thin films are stacked onto ZnAlO seed film respectively to make into two samples. It''s analysis for the two structural sample and electrical characteristic. Three kinds of seed films to do mutual comparison looks for the trends of three samples.At last, to grow the zinc oxide, Li-doped zinc oxide and Al-doped zinc oxide nanorods by the hydrothermal method makes six kinds of samples. The six kinds of samples are measured structural components, electrical and optical analysis. After analyzing and summarizing the data to identify trends, the goal is found out the most suitable material combinations.
From the XRD analysis, the nanorods of hexagonal crystal structure in doping different metal are without causing additional structural defects. From the SIMS analysis, aluminum will diffuse from film to the silicon substrate in the thermal annealing. The n-type silicon substrate surface layer transforms into the p-type silicon substrate.
In PL measurements, the thin film that used rapid cooling in annealing cause the growth of zinc oxide nanorods amount of surface defects. Because the substrate, thin film and nanorods of the relationship, it''s led to the resistance of semiconductor decrease or increase. IV characteristic curve will vary significantly. It''s to identify the most suitable material combinations in photo/dark current ratio. On the light sensitivity of the detector will help to improve for the future applications.
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