NaSbS2 semiconductor as a sensitizer for quantum dot-sensitized solar cells
碩士 === 國立中興大學 === 物理學系所 === 104 === The study about NaSbS2 as a sensitizer for liquid junction sensitized solar cells has been done. NaSbS2 quantum dots (QDs) semiconductor were grown by using succesive ionic layer adsorption and reaction (SILAR) method. The best condition for the growth process are...
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ndltd-TW-104NCHU51980162017-01-01T04:05:20Z http://ndltd.ncl.edu.tw/handle/17111978465519990414 NaSbS2 semiconductor as a sensitizer for quantum dot-sensitized solar cells 利用NaSbS2半導體作為光敏化劑製作量子點敏化太陽能電池 Siti Utari Rahayu 游心悌 碩士 國立中興大學 物理學系所 104 The study about NaSbS2 as a sensitizer for liquid junction sensitized solar cells has been done. NaSbS2 quantum dots (QDs) semiconductor were grown by using succesive ionic layer adsorption and reaction (SILAR) method. The best condition for the growth process are 11 cycle of SILAR with 15 s of Sb3+ dipping time and 60 s of S2- dipping time, annealing at 350℃ for 10/50 min in N2, using polysulfide (S2/Sn2-) as electrolyte, gold (Au) as counter electrode, and room humidity of less than 60%. The X-Ray diffaction (XRD) patterns and transmission electron microscope (TEM) images confirmed that NaSbS2 was succesfully grown into mesoporous (mp)-TiO2 with particle size of ~9-14 nm. The UV-Visible measurement showed that NaSbS2 grown by the best condition has energy gap of 1.76 eV which covers 300-750 nm of optical wavelength. The best cell yielded a short-circuit current density Jsc of 10.76 mA/cm2, an open-circuit voltage Voc of 0.44 V, a fill factor FF of 48.59%, and a power conversion efficiency η of 2.3% under 1 sun. At the reduced light intensity of 0.1 sun, the η increased to 3.18% with Jsc = 1.31 mA/cm2 (which could be normalized to 13.10 mA/cm2). The external quantum efficiency (EQE) spectrum covered the spectral range of 300–750 nm with a maximal EQE = 82% at λ = 450 nm which showed the effectiveness of NaSbS2 QDs in converting light into electricity. These results indicate that NaSbS2 can be a potential solar absorber material. Ming-Way Lee 李明威 2016 學位論文 ; thesis 69 en_US |
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碩士 === 國立中興大學 === 物理學系所 === 104 === The study about NaSbS2 as a sensitizer for liquid junction sensitized solar cells has been done. NaSbS2 quantum dots (QDs) semiconductor were grown by using succesive ionic layer adsorption and reaction (SILAR) method. The best condition for the growth process are 11 cycle of SILAR with 15 s of Sb3+ dipping time and 60 s of S2- dipping time, annealing at 350℃ for 10/50 min in N2, using polysulfide (S2/Sn2-) as electrolyte, gold (Au) as counter electrode, and room humidity of less than 60%. The X-Ray diffaction (XRD) patterns and transmission electron microscope (TEM) images confirmed that NaSbS2 was succesfully grown into mesoporous (mp)-TiO2 with particle size of ~9-14 nm. The UV-Visible measurement showed that NaSbS2 grown by the best condition has energy gap of 1.76 eV which covers 300-750 nm of optical wavelength. The best cell yielded a short-circuit current density Jsc of 10.76 mA/cm2, an open-circuit voltage Voc of 0.44 V, a fill factor FF of 48.59%, and a power conversion efficiency η of 2.3% under 1 sun. At the reduced light intensity of 0.1 sun, the η increased to 3.18% with Jsc = 1.31 mA/cm2 (which could be normalized to 13.10 mA/cm2). The external quantum efficiency (EQE) spectrum covered the spectral range of 300–750 nm with a maximal EQE = 82% at λ = 450 nm which showed the effectiveness of NaSbS2 QDs in converting light into electricity. These results indicate that NaSbS2 can be a potential solar absorber material.
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author2 |
Ming-Way Lee |
author_facet |
Ming-Way Lee Siti Utari Rahayu 游心悌 |
author |
Siti Utari Rahayu 游心悌 |
spellingShingle |
Siti Utari Rahayu 游心悌 NaSbS2 semiconductor as a sensitizer for quantum dot-sensitized solar cells |
author_sort |
Siti Utari Rahayu |
title |
NaSbS2 semiconductor as a sensitizer for quantum dot-sensitized solar cells |
title_short |
NaSbS2 semiconductor as a sensitizer for quantum dot-sensitized solar cells |
title_full |
NaSbS2 semiconductor as a sensitizer for quantum dot-sensitized solar cells |
title_fullStr |
NaSbS2 semiconductor as a sensitizer for quantum dot-sensitized solar cells |
title_full_unstemmed |
NaSbS2 semiconductor as a sensitizer for quantum dot-sensitized solar cells |
title_sort |
nasbs2 semiconductor as a sensitizer for quantum dot-sensitized solar cells |
publishDate |
2016 |
url |
http://ndltd.ncl.edu.tw/handle/17111978465519990414 |
work_keys_str_mv |
AT sitiutarirahayu nasbs2semiconductorasasensitizerforquantumdotsensitizedsolarcells AT yóuxīntì nasbs2semiconductorasasensitizerforquantumdotsensitizedsolarcells AT sitiutarirahayu lìyòngnasbs2bàndǎotǐzuòwèiguāngmǐnhuàjìzhìzuòliàngzidiǎnmǐnhuàtàiyángnéngdiànchí AT yóuxīntì lìyòngnasbs2bàndǎotǐzuòwèiguāngmǐnhuàjìzhìzuòliàngzidiǎnmǐnhuàtàiyángnéngdiànchí |
_version_ |
1718406114925608960 |