NaSbS2 semiconductor as a sensitizer for quantum dot-sensitized solar cells

• Main Authors: Siti Utari Rahayu, 游心悌
• Other Authors: Ming-Way Lee
• Format: Others
• Language: en_US
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/17111978465519990414

碩士 === 國立中興大學 === 物理學系所 === 104 === The study about NaSbS2 as a sensitizer for liquid junction sensitized solar cells has been done. NaSbS2 quantum dots (QDs) semiconductor were grown by using succesive ionic layer adsorption and reaction (SILAR) method. The best condition for the growth process are 11 cycle of SILAR with 15 s of Sb3+ dipping time and 60 s of S2- dipping time, annealing at 350℃ for 10/50 min in N2, using polysulfide (S2/Sn2-) as electrolyte, gold (Au) as counter electrode, and room humidity of less than 60%. The X-Ray diffaction (XRD) patterns and transmission electron microscope (TEM) images confirmed that NaSbS2 was succesfully grown into mesoporous (mp)-TiO2 with particle size of ~9-14 nm. The UV-Visible measurement showed that NaSbS2 grown by the best condition has energy gap of 1.76 eV which covers 300-750 nm of optical wavelength. The best cell yielded a short-circuit current density Jsc of 10.76 mA/cm2, an open-circuit voltage Voc of 0.44 V, a fill factor FF of 48.59%, and a power conversion efficiency η of 2.3% under 1 sun. At the reduced light intensity of 0.1 sun, the η increased to 3.18% with Jsc = 1.31 mA/cm2 (which could be normalized to 13.10 mA/cm2). The external quantum efficiency (EQE) spectrum covered the spectral range of 300–750 nm with a maximal EQE = 82% at λ = 450 nm which showed the effectiveness of NaSbS2 QDs in converting light into electricity. These results indicate that NaSbS2 can be a potential solar absorber material.