Device characteristics of vertical structure AlGaInP power chip LEDs
碩士 === 國立中興大學 === 物理學系所 === 104 === In this thesis, the performances of vertical structure red-color light-emitting diodes (LEDs) were explored. The AlGaInP power chip LED epiwafers were grown by metal organic chemical vapor deposition (MOCVD). The AlGaInP LED power chips were fabricated using wafer...
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ndltd-TW-104NCHU51980192017-01-01T04:05:20Z http://ndltd.ncl.edu.tw/handle/21235035023818918713 Device characteristics of vertical structure AlGaInP power chip LEDs 高功率垂直式結構磷化鋁鎵銦發光二極體元件特性之研究 Shih-Hung Yang 楊士宏 碩士 國立中興大學 物理學系所 104 In this thesis, the performances of vertical structure red-color light-emitting diodes (LEDs) were explored. The AlGaInP power chip LED epiwafers were grown by metal organic chemical vapor deposition (MOCVD). The AlGaInP LED power chips were fabricated using wafer-bonding approaches. As-prepared AlGaInP LED power chips were lightened under high forward currents, and the device performances were detected in an integrating sphere and probe test station. It appears that the emitting wavelength of a lightened AlGaInP red-color power chip LED is increased with lightening time. Auger non-radiative recombination processes are believed to be responsible for the decline of luminous flux in the lightened AlGaInP power chip LED as lightning time is increased. The relationship of junction temperature of the AlGaInP power chip LED versus lightening time was successfully explored in this study. Based on the results of this thesis, it is evident that an efficient heat dissipation mechanism is important and required to enable the application of AlGaInP power chip LED in lightening application. Jyh-Rong Gong 龔志榮 2016 學位論文 ; thesis 70 en_US |
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碩士 === 國立中興大學 === 物理學系所 === 104 === In this thesis, the performances of vertical structure red-color light-emitting diodes (LEDs) were explored.
The AlGaInP power chip LED epiwafers were grown by metal organic chemical vapor deposition (MOCVD). The AlGaInP LED power chips were fabricated using wafer-bonding approaches. As-prepared AlGaInP LED power chips were lightened under high forward currents, and the device performances were detected in an integrating sphere and probe test station. It appears that the emitting wavelength of a lightened AlGaInP red-color power chip LED is increased with lightening time. Auger non-radiative recombination processes are believed to be responsible for the decline of luminous flux in the lightened AlGaInP power chip LED as lightning time is increased. The relationship of junction temperature of the AlGaInP power chip LED versus lightening time was successfully explored in this study.
Based on the results of this thesis, it is evident that an efficient heat dissipation mechanism is important and required to enable the application of AlGaInP power chip LED in lightening application.
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Jyh-Rong Gong |
author_facet |
Jyh-Rong Gong Shih-Hung Yang 楊士宏 |
author |
Shih-Hung Yang 楊士宏 |
spellingShingle |
Shih-Hung Yang 楊士宏 Device characteristics of vertical structure AlGaInP power chip LEDs |
author_sort |
Shih-Hung Yang |
title |
Device characteristics of vertical structure AlGaInP power chip LEDs |
title_short |
Device characteristics of vertical structure AlGaInP power chip LEDs |
title_full |
Device characteristics of vertical structure AlGaInP power chip LEDs |
title_fullStr |
Device characteristics of vertical structure AlGaInP power chip LEDs |
title_full_unstemmed |
Device characteristics of vertical structure AlGaInP power chip LEDs |
title_sort |
device characteristics of vertical structure algainp power chip leds |
publishDate |
2016 |
url |
http://ndltd.ncl.edu.tw/handle/21235035023818918713 |
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