Device characteristics of vertical structure AlGaInP power chip LEDs

• Main Authors: Shih-Hung Yang, 楊士宏
• Other Authors: Jyh-Rong Gong
• Format: Others
• Language: en_US
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/21235035023818918713

碩士 === 國立中興大學 === 物理學系所 === 104 === In this thesis, the performances of vertical structure red-color light-emitting diodes (LEDs) were explored. The AlGaInP power chip LED epiwafers were grown by metal organic chemical vapor deposition (MOCVD). The AlGaInP LED power chips were fabricated using wafer-bonding approaches. As-prepared AlGaInP LED power chips were lightened under high forward currents, and the device performances were detected in an integrating sphere and probe test station. It appears that the emitting wavelength of a lightened AlGaInP red-color power chip LED is increased with lightening time. Auger non-radiative recombination processes are believed to be responsible for the decline of luminous flux in the lightened AlGaInP power chip LED as lightning time is increased. The relationship of junction temperature of the AlGaInP power chip LED versus lightening time was successfully explored in this study. Based on the results of this thesis, it is evident that an efficient heat dissipation mechanism is important and required to enable the application of AlGaInP power chip LED in lightening application.