Development of PZT thick film and its application on cantilever type power generator
碩士 === 國立中興大學 === 機械工程學系所 === 104 === In this thesis, a wave power generator was developed in the piezoelectric cantilevers using lead zirconate titanate (PZT) thick films. PZT thick films was fabricated by sol-gel process. To achieve the desired thickness of the thick film,PZT slurry was prepared,a...
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ndltd-TW-104NCHU53110092019-07-18T03:55:54Z http://ndltd.ncl.edu.tw/handle/ja93my Development of PZT thick film and its application on cantilever type power generator 研製鋯鈦酸鉛厚膜並應用於懸臂式發電裝置 Wen-Sheng Ke 柯文盛 碩士 國立中興大學 機械工程學系所 104 In this thesis, a wave power generator was developed in the piezoelectric cantilevers using lead zirconate titanate (PZT) thick films. PZT thick films was fabricated by sol-gel process. To achieve the desired thickness of the thick film,PZT slurry was prepared,and then spin coated on a silicon wafer. After thermal treatment,PZT thick films were developed in the thickness of 9.5μm per coating until 40μm on the silicon wafer. The impedance and phase of PZT thick film was 4.9kΩ and 88.6° at 1000Hz respectively. The capacitance value and dielectric loss was 32.4nF and 2.36% at 1000Hz. Finally,the dielectric constant was 382.7 After PZT film was fabricated, samples were dicing to the size 40mm x 5mm. Pizoelectric cantilevers without and with proof mass were anchored in a developed fixtures. Respectively measuring the resonance frequency of the cantilevers without and with proof mass,and the resoult was 721Hz and 141Hz. Confirmed that the cantilever with proof mass can significantly reduce the resonance frequency. And the output voltage was 359mV at 141Hz which was resonance frequency. 吳嘉哲 2016 學位論文 ; thesis 75 zh-TW |
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碩士 === 國立中興大學 === 機械工程學系所 === 104 === In this thesis, a wave power generator was developed in the piezoelectric
cantilevers using lead zirconate titanate (PZT) thick films. PZT thick films
was fabricated by sol-gel process. To achieve the desired thickness of the
thick film,PZT slurry was prepared,and then spin coated on a silicon wafer.
After thermal treatment,PZT thick films were developed in the thickness of
9.5μm per coating until 40μm on the silicon wafer. The impedance and phase
of PZT thick film was 4.9kΩ and 88.6° at 1000Hz respectively. The capacitance
value and dielectric loss was 32.4nF and 2.36% at 1000Hz. Finally,the
dielectric constant was 382.7
After PZT film was fabricated, samples were dicing to the size 40mm x 5mm.
Pizoelectric cantilevers without and with proof mass were anchored in a developed
fixtures. Respectively measuring the resonance frequency of the cantilevers
without and with proof mass,and the resoult was 721Hz and 141Hz.
Confirmed that the cantilever with proof mass can significantly reduce the
resonance frequency. And the output voltage was 359mV at 141Hz which
was resonance frequency.
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author2 |
吳嘉哲 |
author_facet |
吳嘉哲 Wen-Sheng Ke 柯文盛 |
author |
Wen-Sheng Ke 柯文盛 |
spellingShingle |
Wen-Sheng Ke 柯文盛 Development of PZT thick film and its application on cantilever type power generator |
author_sort |
Wen-Sheng Ke |
title |
Development of PZT thick film and its application on cantilever type power generator |
title_short |
Development of PZT thick film and its application on cantilever type power generator |
title_full |
Development of PZT thick film and its application on cantilever type power generator |
title_fullStr |
Development of PZT thick film and its application on cantilever type power generator |
title_full_unstemmed |
Development of PZT thick film and its application on cantilever type power generator |
title_sort |
development of pzt thick film and its application on cantilever type power generator |
publishDate |
2016 |
url |
http://ndltd.ncl.edu.tw/handle/ja93my |
work_keys_str_mv |
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