In-situ observation on oxidation process of Zn dots coherently grown on Si (111) by second harmonic generation

• Main Authors: Li-ChiKao, 高儷綺
• Other Authors: Kuang-Yao Lo
• Format: Others
• Language: en_US
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/64354586558194219182

碩士 === 國立成功大學 === 物理學系 === 104 === It is a significant issue to research the oxidation process and mechanisms of metallic nanoparticles. When the nanoscale metallic components are oxidized, it will damage their functions and life time. Particularly, metallic nanoparticles are grown on the semiconductor components as contacts or interconnects. The oxidation may result in the relaxation or void defects of metal nanocontacts, and then reduce the conductivity. It is important to study structural changes of metallic nanoparticles grown on the substrate and their interface after oxidation. We used strategic RF magnetron sputtering to fabricate Zinc quantum dots coherently grown on the Si (111) substrate and in-situ analyzed the oxidation process of Zn quantum dots by reflective second harmonic generation (RSHG). Fully constrained Zn dots and sequent oxidized ZnO shell contributed 3m symmetrical dipole to RSHG pattern. The spot area of pump laser would cover more than 109 dots and exhibited net symmetrical dipole contribution to RSHG pattern which depended on the constrain degree of Zn quantum dots constrained Si (111). The oxidation phenomena would lead to the reduction of Zn core and relax the stress between Zn dots and Si (111), which caused the change in RSHG pattern. Synchrotron X-ray diffraction (XRD) patterns could confirm RSHG result and give the evolution of all possible crystal orientations in the oxidization. Besides, we utilized the field emission - scanning electron microscope (FE-SEM) to observe the micrographs and the depth scan of X-ray photoelectron spectroscopy (XPS) spectra to realize the microstructure of Zn/ZnO core-shell quantum dots via oxidation, respectively. As a result, we further solve the key problem of the oxidation of metallic dots grown on semiconductor as the reference of nano device in the future.