Recovery of Gallium from Semiconductor Wastewater by Ion Exchange Resin

• Main Authors: Tzu-ChanHuang, 黃資展
• Other Authors: Yun-Hwei Shen
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/kma64v

碩士 === 國立成功大學 === 資源工程學系 === 104 === The purpose of this study is to recover gallium from semiconductor wastewater by ion exchange resin, and the effect of gallium recovery and silicate precipitation at different types of pH and concentration. Some experimental results were observed in this study, the precipitation process results indicated that added by addition of sulfuric acid of pH 6 can complete precipitation for gallium and silicate (the precipitation of gallium and silicate were 98.4% and 99.4% respectively). The gallium dissolution process results indicated that added in 0.5 M sulfuric acid of pH 2 and separating of gallium and silicate in sulfuric acid using ion exchange. Loading behavior of the those two metals from strong acid solution was investigated using cation resins (IR120_Na and 200C_Na) and chelating resin (IRC748). The loading capacity of IR120_Na for Ga from sulfuric acid solution at pH 1.2 was 6336.74 mg/L. The Ga ions in the loaded resin was eluted by 6N H2SO4 solution. Finally, adding 5N NaOH solution into the eluted solution containing Ga, Ga2O3 product was precipitated by hot water washing at 40 °C for 1 hour and calcining at 500 °C for 2 hour.