The Evaluation of 6T-SRAM for GAA MOSFETs and FinFETs at 7 nm and 10 nm Technology Nodes
碩士 === 國立成功大學 === 微電子工程研究所 === 104 === As the semiconductor industry continues to advance, it has encountered many physical limitations, mostly related to short-channel effects (SCEs). Below node 22, the multi-gate structure has become the solution to improve the gate controllability. In this thesis...
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/x699be |