Study of Full Color Micro Light-Emitting Diode ArraysAchieved by Quantum Dots

• Main Authors: Bo-YuWei, 魏柏諭
• Other Authors: Hsin-Ying Lee
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/03550980024832290809

碩士 === 國立成功大學 === 光電科學與工程學系 === 104 === In this study, the gallium nitride (GaN)-based blue light-emitting diode (LED) and quantum dots were used to fabricate the full color micro LED arrays (30 m30 m). In the fabrication of micro LED arrays, the black matrix photoresist was used to produce the light blocking structure, which could improve the pixel contrast ratio. In fabrication of color transformation layer, the red quantum dots and green quantum dots were sprayed on the surface of the micro light-emitting diode arrays using the spray technique provided by the Industrial Technology Research Institute. To further enhance the color conversion efficiency, the hybrid Bragg reflector was fabricated at the substrate bottom for the LED arrays to reflect the blue light that emitted to the substrate. In addition, the distributed Bragg reflector was fabricated on the top of the LED arrays to reflect the blue light wasn’t absorbed by the quantum dots back to the device. Consequently, the quantum dots can be excited by the blue light more times to enhance the color transform efficiency and the red and green light color purity. Finally, the experimental results demonstrated that the CIE chromaticity coordinate of the red and green LED in full color micro LED arrays were located at (0.587,0.267) and (0.293,0.581), and the conversion efficiency of red light and green light in full color micro LED arrays were 24.1% and 23.3%.