| Summary: | 碩士 === 國立交通大學 === 光電系統研究所 === 104 === Over the last decade or more, high resolution and narrow-bezel liquid crystal display became the main stream in active-matrix liquid crystal display (AMLCD) technology. However, higher resolution means more pixels in the panel, which lead to more gate driver ICs requirement. The routing between the gate driver ICs and the panel would block the development in narrow bezel display. In order to overcome this issue, the integrated gate driver circuit on glass substrate is invented to replace the function of conventional gate driver ICs, called gate driver on array (GOA). Hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) are used to design the GOA circuit in this work. The reason why a-Si:H TFTs are chosen is described as follow: (1) Low-temperature process (<350℃) would achieves the destiny of cost reduction. (2) High uniformity of amorphous silicon thin film transistors in active layer assure the quality of the fabricated panel.
This thesis proposes two kinds of bi-directional transmissible gate drivers for different a-Si:H TFT LCD application. First one is for medium-large size flat panel application, which utilized alternatively operated “AC-driven inverter” for full time noise-free in non-working state. Using four phase clock signals for single path condition. Employing “driving clock controlled device” and “capacitor-free design” for less devices, “Node sharing mechanism” for area reduction. The second gate driver is for small size flat panel application, “clock controlled noise-free structure” further eliminate the devices, and the concise design successfully reduces the border of the gate driver to 0.95mm.
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