Study on Improving the Stability of Amorphous Indium Zinc Tin Oxide Semiconductor Thin Film Transistor with Gallium Doped
碩士 === 國立交通大學 === 光電工程研究所 === 104 === In this thesis, a promising material, called amorphous InZnSnO (a-IZTO), is investigated for achieving the high mobility oxide thin-film transistors (TFTs) for next generation display. Many researches have reported that a-IZTO with high carrier concentration and...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52469514939997171580 |