Study of UPI Cell Particle Defects Improvement Using Vertical Dish Brush

碩士 === 國立交通大學 === 工學院精密與自動化工程學程 === 104 === This study explored the improvement of substrate cleaning process before Polyimide film coating in the thin-film transistor liquid crystal display (TFT-LCD) production line. An entire batch of TFT-LCD panel was returned by customer caused by the excessive...

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Main Authors: Wang,Chi-Hsiung, 王際雄
Other Authors: Cheng,Stone
Format: Others
Language:zh-TW
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/62104466862072895193
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spelling ndltd-TW-104NCTU51460042017-09-15T04:40:14Z http://ndltd.ncl.edu.tw/handle/62104466862072895193 Study of UPI Cell Particle Defects Improvement Using Vertical Dish Brush 垂直式刷輪於畫素顯示基板異物瑕疵改善研究 Wang,Chi-Hsiung 王際雄 碩士 國立交通大學 工學院精密與自動化工程學程 104 This study explored the improvement of substrate cleaning process before Polyimide film coating in the thin-film transistor liquid crystal display (TFT-LCD) production line. An entire batch of TFT-LCD panel was returned by customer caused by the excessive number of 8%–20% cell particles (CP) defects. Profile analysis process of CP types was conducted on the defected products by question and answer (Q&;A) map and fishbone diagram to assign scores for various defect types. Through the analysis of CP, the defects were categorized into two types: (1) under polyimide (UPI), which refers to particle defects under the polyimide (PI) layer; or (2) over polyimide (OPI), which refers to particle defects above the PI layer. Additionally, the yield loss statistic showed that the OPI type accounted for 17.3% of yield loss, whereas the UPI type accounted for 82.7% of yield loss, among which dirt particles on the substrate surface before PI processing accounted for 68.56% of the overall yield loss of the UPI type. The main cause of these particle defects was due to the failure of cleaning the peripheral machines to prevent dirt from getting on the substrate surface before coating the PI fluid onto the glass substrate surface (TFT or CF), which causing an uneven coverage of PI fluid on the substrate surface during PI film coating, and resulting in poor alignment. Furthermore, because the UPI-type defects were located below the PI layer, the dirt could not be deleted during the post-process cleaning, and reworking of panel was not cost-effective. To improve the pre-PI process cleaning ability, this study replaced the original horizontal brush wheels with standing (vertical) brush wheels, and used the Taguchi method to optimize the process parameters (forward–reverse brushing method, brush wheel speed, brush wheel pressure, and convey speed). The optimized parameters were applied to the substrate cleaning process, and the yield loss was reduced from 8%~20% to 2%~6%. Cheng,Stone 鄭泗東 2015 學位論文 ; thesis 54 zh-TW
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language zh-TW
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description 碩士 === 國立交通大學 === 工學院精密與自動化工程學程 === 104 === This study explored the improvement of substrate cleaning process before Polyimide film coating in the thin-film transistor liquid crystal display (TFT-LCD) production line. An entire batch of TFT-LCD panel was returned by customer caused by the excessive number of 8%–20% cell particles (CP) defects. Profile analysis process of CP types was conducted on the defected products by question and answer (Q&;A) map and fishbone diagram to assign scores for various defect types. Through the analysis of CP, the defects were categorized into two types: (1) under polyimide (UPI), which refers to particle defects under the polyimide (PI) layer; or (2) over polyimide (OPI), which refers to particle defects above the PI layer. Additionally, the yield loss statistic showed that the OPI type accounted for 17.3% of yield loss, whereas the UPI type accounted for 82.7% of yield loss, among which dirt particles on the substrate surface before PI processing accounted for 68.56% of the overall yield loss of the UPI type. The main cause of these particle defects was due to the failure of cleaning the peripheral machines to prevent dirt from getting on the substrate surface before coating the PI fluid onto the glass substrate surface (TFT or CF), which causing an uneven coverage of PI fluid on the substrate surface during PI film coating, and resulting in poor alignment. Furthermore, because the UPI-type defects were located below the PI layer, the dirt could not be deleted during the post-process cleaning, and reworking of panel was not cost-effective. To improve the pre-PI process cleaning ability, this study replaced the original horizontal brush wheels with standing (vertical) brush wheels, and used the Taguchi method to optimize the process parameters (forward–reverse brushing method, brush wheel speed, brush wheel pressure, and convey speed). The optimized parameters were applied to the substrate cleaning process, and the yield loss was reduced from 8%~20% to 2%~6%.
author2 Cheng,Stone
author_facet Cheng,Stone
Wang,Chi-Hsiung
王際雄
author Wang,Chi-Hsiung
王際雄
spellingShingle Wang,Chi-Hsiung
王際雄
Study of UPI Cell Particle Defects Improvement Using Vertical Dish Brush
author_sort Wang,Chi-Hsiung
title Study of UPI Cell Particle Defects Improvement Using Vertical Dish Brush
title_short Study of UPI Cell Particle Defects Improvement Using Vertical Dish Brush
title_full Study of UPI Cell Particle Defects Improvement Using Vertical Dish Brush
title_fullStr Study of UPI Cell Particle Defects Improvement Using Vertical Dish Brush
title_full_unstemmed Study of UPI Cell Particle Defects Improvement Using Vertical Dish Brush
title_sort study of upi cell particle defects improvement using vertical dish brush
publishDate 2015
url http://ndltd.ncl.edu.tw/handle/62104466862072895193
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