| Summary: | 碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === In this work, the afterpulsing effect in single photon avalanche diodes (SPADs) fabricated by TSMC 25HV (high voltage) CMOS process are studied. A new method for evaluating afterpulsing effect has been proposed and demonstrated. Different from conventional method requiring photon correlation measurement and short-pulsed light source, the proposed scheme is simply a measurement of dark count rate (DCR) distribution. Because the afterpulsing events correlate with their parent breakdowns, the DCR distribution deviates from the original Poisson one, which can be used to evaluate afterpulsing probability (APP). To demonstrate the validity of our method, we established a system to measure the temperature-dependent DCRs of a SPAD and analyzed their distribution. At low temperature, as the afterpulsing effect worsens, a clear non-Poisson distribution of DCRs is observed. A quantitative simulation has been performed to find out the relation between the DCR distribution and the APP. Our method is useful for evaluating APPs either in single SPADs or in circuit-integrated SPAD arrays.
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