Optimization of Reliability in SiN-based Conductive Bridge Random Access Memory by Using Tellurium as Source Layer and Enhancing Barrier Property

Optimization of Reliability in SiN-based Conductive Bridge Random Access Memory by Using Tellurium as Source Layer and Enhancing Barrier Property

碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104

Bibliographic Details
Main Authors: Dai, Guang-Jyun, 戴光駿
Other Authors: Tseng, Tseung-Yuen
Format: Others
Language:en_US
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/5hyvp7
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spelling ndltd-TW-104NCTU54281252019-05-15T23:08:41Z http://ndltd.ncl.edu.tw/handle/5hyvp7 Optimization of Reliability in SiN-based Conductive Bridge Random Access Memory by Using Tellurium as Source Layer and Enhancing Barrier Property 利用碲為源層及增強阻障特性於氮化矽金屬導電橋接電阻式記憶體之可靠度優化研究 Dai, Guang-Jyun 戴光駿 碩士 國立交通大學 電子工程學系 電子研究所 104 Tseng, Tseung-Yuen 曾俊元 2016 學位論文 ; thesis 103 en_US
collection NDLTD
language en_US
format Others
sources NDLTD
description 碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104
author2 Tseng, Tseung-Yuen
author_facet Tseng, Tseung-Yuen
Dai, Guang-Jyun
戴光駿
author Dai, Guang-Jyun
戴光駿
spellingShingle Dai, Guang-Jyun
戴光駿
Optimization of Reliability in SiN-based Conductive Bridge Random Access Memory by Using Tellurium as Source Layer and Enhancing Barrier Property
author_sort Dai, Guang-Jyun
title Optimization of Reliability in SiN-based Conductive Bridge Random Access Memory by Using Tellurium as Source Layer and Enhancing Barrier Property
title_short Optimization of Reliability in SiN-based Conductive Bridge Random Access Memory by Using Tellurium as Source Layer and Enhancing Barrier Property
title_full Optimization of Reliability in SiN-based Conductive Bridge Random Access Memory by Using Tellurium as Source Layer and Enhancing Barrier Property
title_fullStr Optimization of Reliability in SiN-based Conductive Bridge Random Access Memory by Using Tellurium as Source Layer and Enhancing Barrier Property
title_full_unstemmed Optimization of Reliability in SiN-based Conductive Bridge Random Access Memory by Using Tellurium as Source Layer and Enhancing Barrier Property
title_sort optimization of reliability in sin-based conductive bridge random access memory by using tellurium as source layer and enhancing barrier property
publishDate 2016
url http://ndltd.ncl.edu.tw/handle/5hyvp7
work_keys_str_mv AT daiguangjyun optimizationofreliabilityinsinbasedconductivebridgerandomaccessmemorybyusingtelluriumassourcelayerandenhancingbarrierproperty
AT dàiguāngjùn optimizationofreliabilityinsinbasedconductivebridgerandomaccessmemorybyusingtelluriumassourcelayerandenhancingbarrierproperty
AT daiguangjyun lìyòngdìwèiyuáncéngjízēngqiángzǔzhàngtèxìngyúdànhuàxìjīnshǔdǎodiànqiáojiēdiànzǔshìjìyìtǐzhīkěkàodùyōuhuàyánjiū
AT dàiguāngjùn lìyòngdìwèiyuáncéngjízēngqiángzǔzhàngtèxìngyúdànhuàxìjīnshǔdǎodiànqiáojiēdiànzǔshìjìyìtǐzhīkěkàodùyōuhuàyánjiū
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