表面結構對GaN基LED外部發光效率之影響模擬與分析

• Main Authors: Bo-Hao Chen, 陳伯豪
• Other Authors: Fu-Der Lai
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/10649777691446894962

碩士 === 國立高雄第一科技大學 === 電機工程研究所碩士班 === 104 === In this paper, in order to improve the luminous efficiency of the LED, we use the finite element coupled multi-physics simulation software(Comsol Mutiphysics) to the surface of the P-type gallium nitride blue InGaN LED, and make a rough groove V-type surface pores to simulate the array structure. By simulating the V-type surface roughness of the hole density and the depth of the groove, we changed the material thickness, and analyzed the energy distribution pictures in different density, depth and thickness. Then, we study ways to improve the luminous efficiency from simulation. The simulation results also found that if the hole depth is greater than the thickness of GaN luminous efficiency will be greatly enhanced. In the GaN thickness 200nm, V-type hole depth and hole distance were maintained at 280nm and 100nm, ZrO2 thickness fixed at 8nm and ITO is at 180nm, the simulation value of luminous efficiency were up to 4.6 times when compared to the traditional simulations at 2D magnification.